The NGTG50N60FWG is an insulated gate bipolar transistor with a collector-emitter breakdown voltage of 600V and a maximum collector current of 100A. It has a maximum power dissipation of 223W and is packaged in a TO-247-3 case. The device is lead-free and halogen-free, and is compliant with RoHS standards. The operating temperature range is from -55°C to 150°C.
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| Package/Case | TO-247-3 |
| Collector Emitter Breakdown Voltage | 600V |
| Collector Emitter Saturation Voltage | 1.45V |
| Collector Emitter Voltage (VCEO) | 600V |
| Collector-emitter Voltage-Max | 1.7V |
| Halogen Free | Halogen Free |
| Height | 21.4mm |
| Input Type | STANDARD |
| Lead Free | Lead Free |
| Length | 16.25mm |
| Max Collector Current | 100A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 223W |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Power Dissipation | 223W |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Width | 5.3mm |
| RoHS | Compliant |
