The NJD1718T4G is a PNP bipolar junction transistor with a maximum collector current of 2A and a maximum breakdown voltage of 50V. It is packaged in a halogen-free and RoHS compliant DPAK-3 package and is suitable for surface mount applications. The transistor has a transition frequency of 80MHz and a maximum power dissipation of 1.68W. It can operate over a temperature range of -65°C to 150°C.
PackageDPAK
MountingSurface Mount
PolarityPNP
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Technical Specifications
Onsemi NJD1718T4G technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 500mV |
| Emitter Base Voltage (VEBO) | -5V |
| Halogen Free | Halogen Free |
| hFE Min | 70 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.68W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 80MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NJD1718T4G Datasheet
Download the complete datasheet for Onsemi NJD1718T4G to view detailed technical specifications.
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