NPN bipolar power transistor in a DPAK surface mount package. Features a 50V collector-emitter breakdown voltage and a 2A continuous collector current rating. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 65MHz. Operates within a temperature range of -65°C to 175°C with a maximum power dissipation of 1.68W. Packaged in tape and reel for 2500 units.
Frequency65MHz
PackageDPAK
Current Rating2A
MountingSurface Mount
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Technical Specifications
Onsemi NJD2873T4G technical specifications.
General
Package/Case
DPAK
Collector Base Voltage (VCBO)
50V
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
300mV
Collector Emitter Voltage (VCEO)
50V
Collector-emitter Voltage-Max
300mV
Current Rating
2A
Emitter Base Voltage (VEBO)
5V
Frequency
65MHz
Gain Bandwidth Product
65MHz
Height
2.38mm
hFE Min
120
Lead Free
Lead Free
Length
6.73mm
Max Breakdown Voltage
50V
Max Collector Current
2A
Max Frequency
10MHz
Max Operating Temperature
175°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.68W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
NPN
Power Dissipation
1.68W
Radiation Hardening
No
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
65MHz
DC Rated Voltage
50V
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NJD2873T4G Datasheet
Download the complete datasheet for Onsemi NJD2873T4G to view detailed technical specifications.
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