NPN bipolar power transistor in a DPAK surface mount package. Features a 50V collector-emitter breakdown voltage and a 2A continuous collector current rating. Offers a minimum DC current gain (hFE) of 120 and a transition frequency of 65MHz. Operates within a temperature range of -65°C to 175°C with a maximum power dissipation of 1.68W. Packaged in tape and reel for 2500 units.
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Onsemi NJD2873T4G technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 65MHz |
| Gain Bandwidth Product | 65MHz |
| Height | 2.38mm |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 2A |
| Max Frequency | 10MHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.68W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.68W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 65MHz |
| DC Rated Voltage | 50V |
| Width | 6.22mm |
| RoHS | Compliant |
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