
The NJL1302D is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 260V and a maximum collector current of 15A. It has a maximum power dissipation of 200W and operates over a temperature range of -65°C to 150°C. The transistor is packaged in a TO-264-5 case and is available in quantities of 2500. It is not RoHS compliant due to the presence of lead.
Onsemi NJL1302D technical specifications.
| Package/Case | TO-264-5 |
| Collector Base Voltage (VCBO) | 260V |
| Collector Emitter Breakdown Voltage | 260V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | -25A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 75 |
| Lead Free | Contains Lead |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200W |
| Mount | Through Hole |
| Package Quantity | 2500 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| RoHS Compliant | No |
| Transition Frequency | 30MHz |
| DC Rated Voltage | -260V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi NJL1302D to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
