The NJL3281D is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 260V and a maximum collector current of 15A. It has a gain bandwidth product of 30MHz and a minimum current gain of 75. The transistor is packaged in a TO-264-5 package and has a maximum power dissipation of 200W. It can operate over a temperature range of -65°C to 150°C. The NJL3281D is not RoHS compliant and contains lead.
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Onsemi NJL3281D technical specifications.
| Package/Case | TO-264-5 |
| Collector Base Voltage (VCBO) | 260V |
| Collector Emitter Breakdown Voltage | 260V |
| Collector-emitter Voltage-Max | 3V |
| Current Rating | 25A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 30MHz |
| hFE Min | 75 |
| Lead Free | Contains Lead |
| Max Collector Current | 15A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 200W |
| Package Quantity | 25 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| RoHS Compliant | No |
| Transition Frequency | 30MHz |
| DC Rated Voltage | 260V |
| RoHS | Not Compliant |
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