The NJVMJB41CT4G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 6A. It has a gain bandwidth product of 3MHz and a maximum operating temperature of 150°C. The transistor is packaged in a lead-free D2PAK package and is RoHS compliant. It has a maximum power dissipation of 2W and a minimum operating temperature of -65°C.
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Onsemi NJVMJB41CT4G technical specifications.
| Package/Case | D2PAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 1.5V |
| Collector-emitter Voltage-Max | 1.5V |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 3MHz |
| Height | 4.83mm |
| Lead Free | Lead Free |
| Length | 10.29mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 6A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| Width | 11.05mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NJVMJB41CT4G to view detailed technical specifications.
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