The NJVMJD112T4G is a single NPN transistor from Onsemi, packaged in a DPAK case. It features a collector-emitter breakdown voltage of 100V, a collector-emitter saturation voltage of 2V, and a maximum collector current of 2A. The transistor is rated for a maximum power dissipation of 20W and operates over a temperature range of -65°C to 150°C. It is lead-free and halogen-free, and compliant with RoHS regulations.
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Onsemi NJVMJD112T4G technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Emitter Base Voltage (VEBO) | 5V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 20W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 25MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NJVMJD112T4G to view detailed technical specifications.
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