The NJVMJD117T4G is a PNP transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 2A. It is packaged in a DPAK case and is suitable for operation over a temperature range of -65°C to 150°C. The transistor is lead-free and halogen-free, and is compliant with RoHS regulations. It has a maximum power dissipation of 1.75W and a transition frequency of 25MHz.
PackageDPAK
PolarityPNP
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Technical Specifications
Onsemi NJVMJD117T4G technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Emitter Base Voltage (VEBO) | 5V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 25MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NJVMJD117T4G Datasheet
Download the complete datasheet for Onsemi NJVMJD117T4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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