The NJVMJD117T4G is a PNP transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 2A. It is packaged in a DPAK case and is suitable for operation over a temperature range of -65°C to 150°C. The transistor is lead-free and halogen-free, and is compliant with RoHS regulations. It has a maximum power dissipation of 1.75W and a transition frequency of 25MHz.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NJVMJD117T4G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NJVMJD117T4G technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 3V |
| Emitter Base Voltage (VEBO) | 5V |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Collector Current | 2A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 25MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NJVMJD117T4G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
