
NPN Darlington Bipolar Power Transistor, 8A max collector current, 100V collector-emitter breakdown voltage. Features 2V collector-emitter saturation voltage and 100MHz transition frequency. Packaged in a DPAK (TO-252) surface-mount case, this component offers 1.75W max power dissipation and operates from -65°C to 150°C. It is RoHS compliant and halogen-free.
Onsemi NJVMJD122T4G technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Saturation Voltage | 2V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 4V |
| Emitter Base Voltage (VEBO) | 5V |
| Halogen Free | Halogen Free |
| Height | 2.38mm |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 6.22mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NJVMJD122T4G to view detailed technical specifications.
No datasheet is available for this part.
