The NJVMJD2955T4G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 10A. It is packaged in a DPAK package and is RoHS compliant. The transistor has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It is not radiation hardened and has a transition frequency of 2MHz.
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Onsemi NJVMJD2955T4G technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 8V |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| RoHS | Compliant |
No datasheet is available for this part.
