The NJVMJD3055T4G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 10A. It has a maximum power dissipation of 1.75W and is packaged in the TO-252-3 package. The transistor operates over a temperature range of -55°C to 150°C and is lead-free and RoHS compliant. The NJVMJD3055T4G is suitable for use in a variety of applications including general-purpose switching and amplification.
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Onsemi NJVMJD3055T4G technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 70V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 8V |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 2MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NJVMJD3055T4G to view detailed technical specifications.
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