The NJVMJD31CT4G is a NPN transistor with a collector-emitter breakdown voltage of 100V and a maximum collector current of 3A. It is packaged in a TO-252-3 package and is lead-free and RoHS compliant. The transistor has a maximum power dissipation of 15W and operates over a temperature range of -65°C to 150°C.
Checking distributor stock and pricing after the page loads.
Onsemi NJVMJD31CT4G technical specifications.
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 100V |
| Collector Emitter Voltage (VCEO) | 100V |
| Collector-emitter Voltage-Max | 1.2V |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 15W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Reach SVHC Compliant | Unknown |
| RoHS Compliant | Yes |
| Transition Frequency | 3MHz |
| RoHS | Compliant |
No datasheet is available for this part.
