The NJVMJD350T4G is a PNP bipolar junction transistor with a collector base voltage of 300V and a maximum collector current of 500mA. It has a maximum power dissipation of 1.56W and operates within a temperature range of -65°C to 150°C. The transistor is packaged in a lead-free DPAK and is RoHS compliant.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NJVMJD350T4G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NJVMJD350T4G technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 3V |
| Gain Bandwidth Product | 10MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MJD350 |
| Transition Frequency | 10MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NJVMJD350T4G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
