Onsemi NJVMJD350T4G technical specifications.
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 3V |
| Gain Bandwidth Product | 10MHz |
| hFE Min | 30 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.56W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | MJD350 |
| Transition Frequency | 10MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NJVMJD350T4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.