The NJVMJD41CT4G is a TO-252-3 packaged NPN bipolar junction transistor with a maximum collector-emitter breakdown voltage of 100V and a maximum collector current of 50uA. It operates over a temperature range of -65°C to 150°C and has a maximum power dissipation of 1.75W. This transistor is compliant with AEC-Q101 and is lead-free. It is suitable for use in automotive applications.
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Onsemi NJVMJD41CT4G technical specifications.
| Package/Case | TO-252-3 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 100V |
| Collector-emitter Voltage-Max | 1.5V |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 100V |
| Max Collector Current | 50uA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | Automotive, AEC-Q101 |
| Transition Frequency | 3MHz |
| RoHS | Compliant |
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