The NJVMJD44H11G is a NPN transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 8A. It has a gain bandwidth product of 85MHz and is packaged in a TO-252-3 plastic package. The transistor is RoHS compliant and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
PackageTO-252-3
PolarityNPN
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Technical Specifications
Onsemi NJVMJD44H11G technical specifications.
General
| Package/Case | TO-252-3 |
| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Continuous Collector Current | 8A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 85MHz |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 80V |
| Max Collector Current | 8A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.75W |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 85MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NJVMJD44H11G Datasheet
Download the complete datasheet for Onsemi NJVMJD44H11G to view detailed technical specifications.
No datasheet is available for this part.