NPN Bipolar Junction Transistor (BJT) with a 50V collector-emitter breakdown voltage and a maximum collector current of 2A. Features a 300mV collector-emitter saturation voltage and a 65MHz transition frequency. Housed in a DPAK package, this component offers a maximum power dissipation of 1.68W and operates across a temperature range of -65°C to 175°C. Packaging is 2500 units on tape and reel, and the component is lead-free and RoHS compliant.
Frequency65MHz
PackageDPAK
PolarityNPN
Power1.68W
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Technical Specifications
Onsemi NJVNJD2873T4G technical specifications.
General
| Package/Case | DPAK |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Saturation Voltage | 300mV |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 300mV |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 65MHz |
| Height | 2.38mm |
| Lead Free | Lead Free |
| Length | 6.73mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 2A |
| Max Frequency | 100kHz |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.68W |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 1.68W |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 65MHz |
| Width | 6.22mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NJVNJD2873T4G Datasheet
Download the complete datasheet for Onsemi NJVNJD2873T4G to view detailed technical specifications.
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