
PNP bipolar power transistor with a maximum collector current of 15A and a collector-emitter voltage of 250V. Features a maximum power dissipation of 150W and a transition frequency of 30MHz. This component operates within a temperature range of -65°C to 150°C and is supplied in a TO-3P-3LD package, 30 per tube. It is RoHS compliant and lead-free.
Onsemi NJW0302G technical specifications.
| Collector Base Voltage (VCBO) | 250V |
| Collector Emitter Breakdown Voltage | 250V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 250V |
| Collector-emitter Voltage-Max | 1V |
| Emitter Base Voltage (VEBO) | 5V |
| Frequency | 30MHz |
| Gain Bandwidth Product | 30MHz |
| Height | 20.1mm |
| hFE Min | 75 |
| Lead Free | Lead Free |
| Length | 15.8mm |
| Max Collector Current | 15A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 150W |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | PNP |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 30MHz |
| Width | 5mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NJW0302G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
