The NJW44H11G is an NPN transistor with a collector-emitter breakdown voltage of 80V and a collector-emitter saturation voltage of 1V. It can handle a maximum collector current of 10A and has a gain bandwidth product of 85MHz. The device is lead-free and RoHS compliant, and is available in a through-hole package. The operating temperature range is from -65°C to 150°C, with a maximum power dissipation of 120W.
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| Collector Emitter Breakdown Voltage | 80V |
| Collector Emitter Saturation Voltage | 1V |
| Collector-emitter Voltage-Max | 1V |
| Continuous Collector Current | 10A |
| Gain Bandwidth Product | 85MHz |
| Lead Free | Lead Free |
| Max Collector Current | 10A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 85MHz |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NJW44H11G to view detailed technical specifications.
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