The NRVBD640VCTT4G is a dual silicon rectifier diode with a maximum operating temperature of 175 degrees Celsius and a minimum operating temperature of -65 degrees Celsius. It features a single terminal position and is constructed with silicon diode elements. The diode type is a rectifier diode with a minimum breakdown voltage of 40 volts and a maximum reverse voltage of 40 volts.
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Technical Specifications
Onsemi NRVBD640VCTT4G technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Min Operating Temperature | -65 |
| Terminal Position | SINGLE |
| Number of Elements | 2 |
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Rep Pk Reverse Voltage-Max | 40 |
| Breakdown Voltage-Min | 40 |
Compliance
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Onsemi NRVBD640VCTT4G Datasheet
Download the complete datasheet for Onsemi NRVBD640VCTT4G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.