The NSBA123JDXV6T1G is a PNP transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 500mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a lead-free plastic case and is RoHS compliant.
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Onsemi NSBA123JDXV6T1G technical specifications.
| Package/Case | SOT-563 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 357mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| RoHS | Compliant |
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