The NSBA123JDXV6T5 is a PNP bipolar junction transistor with a maximum collector-emitter voltage of 50V and a continuous collector current of -100mA. It has a minimum current gain of 80 and a maximum power dissipation of 357mW. The transistor is packaged in a SOT-563-6 plastic case and is available on tape and reel. It is RoHS compliant and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
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Onsemi NSBA123JDXV6T5 technical specifications.
| Package/Case | SOT-563-6 |
| Collector-emitter Voltage-Max | 50V |
| Continuous Collector Current | -100mA |
| Current Rating | -100mA |
| hFE Min | 80 |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 357mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | -50V |
| RoHS | Compliant |
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