The NSBC114YDXV6T5 is a NPN bipolar junction transistor with a maximum collector-emitter voltage of 50V and a continuous collector current of 100mA. It has a high current gain of 80 and a maximum power dissipation of 357mW. The transistor is packaged in a lead-free plastic case with six pins and is suitable for use in a temperature range of -55°C to 150°C. It is RoHS compliant and available on tape and reel.
PackageSOT-563-6
PolarityNPN
Power357mW
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Technical Specifications
Onsemi NSBC114YDXV6T5 technical specifications.
General
| Package/Case | SOT-563-6 |
| Collector-emitter Voltage-Max | 50V |
| Continuous Collector Current | 100mA |
| hFE Min | 80 |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 357mW |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSBC114YDXV6T5 Datasheet
Download the complete datasheet for Onsemi NSBC114YDXV6T5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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