The NSBC123JDXV6T5G is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a SOT-563-6 package and has a maximum power dissipation of 500mW. The transistor is RoHS compliant and has a minimum operating temperature of -55°C and a maximum operating temperature of 150°C.
Onsemi NSBC123JDXV6T5G technical specifications.
| Package/Case | SOT-563-6 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 8000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 357mW |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| RoHS | Compliant |
No datasheet is available for this part.
