The NSBC124EDXV6T1G is a bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 500mW and is packaged in a SOT-563-6 package. The transistor operates over a temperature range of -55°C to 150°C and is lead-free and RoHS compliant. It has a minimum current gain of 60 and a maximum collector-emitter voltage of 250mV.
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| Package/Case | SOT-563-6 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Continuous Collector Current | 100mA |
| Current Rating | 100mA |
| Height | 0.55mm |
| hFE Min | 60 |
| Lead Free | Lead Free |
| Length | 1.6mm |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | 50V |
| Weight | 0.000289oz |
| Width | 1.2mm |
| RoHS | Compliant |
These are design resources that include the Onsemi NSBC124EDXV6T1G
Official notice from ON Semiconductor detailing the discontinuance of various discrete, analog, and power products with final buy dates in late 2006.
