
The NSCT817-25LT1G is a surface mount NPN bipolar junction transistor with a collector-emitter breakdown voltage of 45V and a maximum collector current of 100mA. It has a maximum power dissipation of 225mW and operates over a temperature range of -55°C to 150°C. The transistor is packaged in a TO-236-3 case and is lead free.
Sign in to ask questions about the Onsemi NSCT817-25LT1G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NSCT817-25LT1G technical specifications.
| Package/Case | TO-236-3 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 100mA |
| Lead Free | Lead Free |
| Max Collector Current | 100nA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Transition Frequency | 100MHz |
| DC Rated Voltage | 45V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NSCT817-25LT1G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.