The NSM80100MT1G is a PNP bipolar junction transistor with a collector-emitter breakdown voltage of 80V and a maximum collector current of 500mA. It features a high current gain of 120 and a transition frequency of 150MHz. The transistor is packaged in a small outline SC package and is RoHS compliant. It operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 270mW.
PackageSC
PolarityPNP
Quick Jump:
Technical Specifications
Onsemi NSM80100MT1G technical specifications.
General
| Package/Case | SC |
| Collector Emitter Breakdown Voltage | 80V |
| Collector-emitter Voltage-Max | 250mV |
| Emitter Base Voltage (VEBO) | -4V |
| hFE Min | 120 |
| Lead Free | Lead Free |
| Max Collector Current | 500mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 270mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| RoHS Compliant | Yes |
| Series | NSM80100M |
| Transition Frequency | 150MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSM80100MT1G Datasheet
Download the complete datasheet for Onsemi NSM80100MT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
