NPN bipolar junction transistor featuring a low 150mV collector-emitter saturation voltage. This component offers a maximum collector current of 5A and a collector-emitter breakdown voltage of 40V. It operates within a temperature range of -55°C to 150°C and has a transition frequency of 150MHz. The transistor is housed in a compact 2mm x 2mm x 0.75mm DFN package with a 1.3mm pitch, supplied on a 3000-piece tape and reel. It is RoHS compliant and halogen-free.
Frequency150MHz
PackageDFN
PolarityNPN
Quick Jump:
Technical Specifications
Onsemi NSS40501UW3T2G technical specifications.
General
| Package/Case | DFN |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | 150mV |
| Collector-emitter Voltage-Max | 150mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 150MHz |
| Halogen Free | Halogen Free |
| Height | 0.75mm |
| hFE Min | 200 |
| Lead Free | Lead Free |
| Length | 2mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 5A |
| Max Frequency | 150MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 150MHz |
| Width | 2mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS40501UW3T2G Datasheet
Download the complete datasheet for Onsemi NSS40501UW3T2G to view detailed technical specifications.
No datasheet is available for this part.