PNP Bipolar Junction Transistor (BJT) in SOT-23-3 package. Features a 60V collector-emitter breakdown voltage and a low -30mV collector-emitter saturation voltage. Offers a maximum collector current of 2A and a transition frequency of 100MHz. Operates within a temperature range of -55°C to 150°C with a power dissipation of 540mW. Packaged on a 3000-piece tape and reel.
Onsemi NSS60200LT1G technical specifications.
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | 80V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -30mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 220mV |
| Emitter Base Voltage (VEBO) | 7V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Height | 1.01mm |
| hFE Min | 150 |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 2A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 540mW |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 540mW |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.4mm |
| RoHS | Compliant |
No datasheet is available for this part.
