PNP Bipolar Junction Transistor (BJT) with a 60V Collector-Emitter Breakdown Voltage and 6A Max Collector Current. Features low -350mV Collector-Emitter Saturation Voltage and a 100MHz Transition Frequency. Housed in a SOT-223-4 package, this component offers 150 minimum hFE and operates across a -55°C to 150°C temperature range. RoHS and Halogen Free compliant, it is supplied on a 1000-piece tape and reel.
Frequency100MHz
PackageSOT-223-4
PolarityPNP
Power2W
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Technical Specifications
Onsemi NSS60600MZ4T1G technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector Emitter Saturation Voltage | -350mV |
| Collector Emitter Voltage (VCEO) | 60V |
| Collector-emitter Voltage-Max | 350mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 1.65mm |
| hFE Min | 150 |
| Lead Free | Lead Free |
| Length | 6.7mm |
| Max Breakdown Voltage | 60V |
| Max Collector Current | 6A |
| Max Frequency | 1MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Number of Elements | 1 |
| Package Quantity | 1000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 3.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS60600MZ4T1G Datasheet
Download the complete datasheet for Onsemi NSS60600MZ4T1G to view detailed technical specifications.
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