The NSS60600MZ4T3G is a PNP transistor with a collector-emitter breakdown voltage of 60V and a maximum collector current of 6A. It has a gain bandwidth product of 100MHz and is packaged in a halogen-free and RoHS-compliant SOT-223-4 package. The transistor is rated for operation between -55°C and 150°C and has a maximum power dissipation of 2W.
PackageSOT-223-4
PolarityPNP
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Technical Specifications
Onsemi NSS60600MZ4T3G technical specifications.
General
| Package/Case | SOT-223-4 |
| Collector Base Voltage (VCBO) | 100V |
| Collector Emitter Breakdown Voltage | 60V |
| Collector-emitter Voltage-Max | 350mV |
| Emitter Base Voltage (VEBO) | 6V |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| hFE Min | 150 |
| Lead Free | Lead Free |
| Max Collector Current | 6A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Package Quantity | 4000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSS60600MZ4T3G Datasheet
Download the complete datasheet for Onsemi NSS60600MZ4T3G to view detailed technical specifications.
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