PNP Bipolar Junction Transistor (BJT) in a 6-lead SOT-363 package. Features a collector-emitter voltage (VCEO) of -45V, collector current (IC) up to 100mA, and a transition frequency (fT) of 100MHz. Offers a maximum power dissipation of 380mW and operates across a temperature range of -55°C to 150°C. Packaged in a 3000-piece tape and reel, this component is RoHS compliant.
PackageSOT-363-6
PolarityPNP
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Technical Specifications
Onsemi NST45010MW6T1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 45V |
| Collector Emitter Saturation Voltage | -300mV |
| Collector Emitter Voltage (VCEO) | -45V |
| Collector-emitter Voltage-Max | 650mV |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 100MHz |
| Height | 1mm |
| Lead Free | Lead Free |
| Length | 2.2mm |
| Max Breakdown Voltage | 45V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 380mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Width | 1.35mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NST45010MW6T1G Datasheet
Download the complete datasheet for Onsemi NST45010MW6T1G to view detailed technical specifications.
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