NPN Bipolar Junction Transistor (BJT) in TSOP package, featuring a 30V collector-emitter breakdown voltage and a 2A maximum collector current. Offers low VCE(sat) of 100mV, a minimum hFE of 300, and a transition frequency of 300MHz. Operates across a temperature range of -55°C to 150°C with 535mW power dissipation. This RoHS compliant and halogen-free component is supplied on a 3000-piece tape and reel.
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Onsemi NST489AMT1G technical specifications.
| Package/Case | TSOP |
| Collector Base Voltage (VCBO) | 50V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 100mV |
| Collector-emitter Voltage-Max | 200mV |
| Current Rating | 2A |
| Emitter Base Voltage (VEBO) | 5V |
| Gain Bandwidth Product | 300MHz |
| Halogen Free | Halogen Free |
| Height | 1mm |
| hFE Min | 300 |
| Lead Free | Lead Free |
| Length | 3.1mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 2A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 535mW |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 535mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Series | NST489 |
| Transition Frequency | 300MHz |
| DC Rated Voltage | 30V |
| Width | 1.7mm |
| RoHS | Compliant |
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