PNP Bipolar Junction Transistor (BJT) with a maximum collector current of 2A and a low collector-emitter saturation voltage of -135mV. Features a collector-base voltage (VCBO) of -40V and a maximum collector-emitter voltage of 170mV. Operates within a temperature range of -55°C to 150°C and boasts a transition frequency of 100MHz. Packaged in a SOT-23-3 (TO-236) surface-mount package, supplied on a 3000-piece tape and reel. This component is RoHS compliant and halogen-free.
Frequency100MHz
PackageSOT-23-3
PolarityPNP
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Technical Specifications
Onsemi NSV40200LT1G technical specifications.
General
| Package/Case | SOT-23-3 |
| Collector Base Voltage (VCBO) | -40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Saturation Voltage | -135mV |
| Collector-emitter Voltage-Max | 170mV |
| Emitter Base Voltage (VEBO) | -7V |
| Gain Bandwidth Product | 100MHz |
| Halogen Free | Halogen Free |
| Height | 1.11mm |
| Lead Free | Lead Free |
| Length | 3.04mm |
| Max Breakdown Voltage | 40V |
| Max Collector Current | 2A |
| Max Frequency | 100MHz |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 460mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
| Weight | 0.050717oz |
| Width | 2.64mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSV40200LT1G Datasheet
Download the complete datasheet for Onsemi NSV40200LT1G to view detailed technical specifications.
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