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Technical Specifications
Onsemi NSV40301MDR2G technical specifications.
General
| Package/Case | SOIC |
| Collector Base Voltage (VCBO) | 40V |
| Collector Emitter Breakdown Voltage | 40V |
| Collector Emitter Voltage (VCEO) | 40V |
| Collector-emitter Voltage-Max | 115mV |
| Emitter Base Voltage (VEBO) | 6V |
| Frequency | 100MHz |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 653mW |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Power Dissipation | 783mW |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Transition Frequency | 100MHz |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSV40301MDR2G Datasheet
Download the complete datasheet for Onsemi NSV40301MDR2G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.