The NSVBA114YDXV6T1G is a bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It is packaged in a surface mount SOT-563 package and is suitable for operating temperatures between -55°C and 150°C. The transistor is lead-free and RoHS compliant, making it suitable for use in a variety of applications. The maximum power dissipation of the transistor is 500mW.
PackageSOT-563
MountingSurface Mount
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Technical Specifications
Onsemi NSVBA114YDXV6T1G technical specifications.
General
| Package/Case | SOT-563 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 500mW |
| Mount | Surface Mount |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSVBA114YDXV6T1G Datasheet
Download the complete datasheet for Onsemi NSVBA114YDXV6T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.