The NSVMSD42WT1G is a NPN bipolar junction transistor with a collector base voltage of 300V and a maximum collector current of 150mA. It has a maximum power dissipation of 450mW and operates within a temperature range of -55°C to 150°C. The transistor is packaged in a SMALL OUTLINE, R-PDSO-G3 package and is compliant with RoHS regulations. It is also halogen free and lead free.
PolarityNPN
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Technical Specifications
Onsemi NSVMSD42WT1G technical specifications.
General
| Collector Base Voltage (VCBO) | 300V |
| Collector Emitter Breakdown Voltage | 300V |
| Collector-emitter Voltage-Max | 500mV |
| Halogen Free | Halogen Free |
| Lead Free | Lead Free |
| Max Collector Current | 150mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 450mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSVMSD42WT1G Datasheet
Download the complete datasheet for Onsemi NSVMSD42WT1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.