The NSVMUN5332DW1T1G is a bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 250mW and operates within a temperature range of -55°C to 150°C. The transistor is packaged in a SOT-363-6 package and is lead-free. It is RoHS compliant and available in quantities of 3000 per reel.
Onsemi NSVMUN5332DW1T1G technical specifications.
| Package/Case | SOT-363-6 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector-emitter Voltage-Max | 250mV |
| hFE Min | 15 |
| Lead Free | Lead Free |
| Max Breakdown Voltage | 50V |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| RoHS Compliant | Yes |
| RoHS | Compliant |
No datasheet is available for this part.
