The NSVMUN5334DW1T1G is a bipolar junction transistor with a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It has a maximum power dissipation of 250mW and operates over a temperature range of -55°C to 150°C. The transistor is available in a lead-free SOT-363 package, which is suitable for surface mount applications. The device is RoHS compliant and is available in quantities of 3000 per reel.
PackageSOT-363-6
PolarityNPN, PNP
Quick Jump:
Technical Specifications
Onsemi NSVMUN5334DW1T1G technical specifications.
General
| Package/Case | SOT-363-6 |
| Collector Emitter Breakdown Voltage | 50V |
| Collector Emitter Voltage (VCEO) | 50V |
| Collector-emitter Voltage-Max | 250mV |
| hFE Min | 80 |
| Lead Free | Lead Free |
| Max Collector Current | 100mA |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 250mW |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NSVMUN5334DW1T1G Datasheet
Download the complete datasheet for Onsemi NSVMUN5334DW1T1G to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
