Single N-Channel MOSFET for gate ESD protection. Features 20V drain-source breakdown voltage and 238mA continuous drain current. Offers a low 1.5Ω drain-source on-resistance. Operates within a -55°C to 150°C temperature range. Packaged in a compact SC-75 (SOT-416) 3-lead surface-mount package, supplied on a 3000-piece tape and reel.
PackageSC
Current Rating238mA
PolarityN-CHANNEL
Power300mW
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Technical Specifications
Onsemi NTA4001NT1G technical specifications.
General
| Package/Case | SC |
| Continuous Drain Current (ID) | 238mA |
| Current Rating | 238mA |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 2.2R |
| Drain-source On Resistance-Max | 1.5R |
| Element Configuration | Single |
| Fall Time | 15ns |
| Gate to Source Voltage (Vgs) | 10V |
| Height | 0.8mm |
| Input Capacitance | 20pF |
| Lead Free | Lead Free |
| Length | 0.064inch |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 300mW |
| Nominal Vgs | 1V |
| Number of Elements | 1 |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Polarization | N |
| Power Dissipation | 300mW |
| Radiation Hardening | No |
| Rds On Max | 3R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 98ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 20V |
| Width | 0.9mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTA4001NT1G Datasheet
Download the complete datasheet for Onsemi NTA4001NT1G to view detailed technical specifications.
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