
The NTA4151PT1 is a P-channel junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 760mA and a drain to source breakdown voltage of -20V. The device features a drain to source resistance of 490mR and a gate to source voltage of 6V. It is packaged in a SC-75 package and is suitable for surface mount applications.
Onsemi NTA4151PT1 technical specifications.
| Package/Case | SC |
| Continuous Drain Current (ID) | 760mA |
| Current Rating | -760mA |
| Drain to Source Breakdown Voltage | -20V |
| Drain to Source Resistance | 490mR |
| Drain to Source Voltage (Vdss) | 20V |
| Fall Time | 8.2ns |
| Gate to Source Voltage (Vgs) | 6V |
| Input Capacitance | 156pF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 301mW |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 301mW |
| Rds On Max | 360mR |
| RoHS Compliant | No |
| Turn-Off Delay Time | 29ns |
| DC Rated Voltage | -20V |
| RoHS | Not Compliant |
Download the complete datasheet for Onsemi NTA4151PT1 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
