
Single N-Channel MOSFET featuring 20V drain-source breakdown voltage and 915mA continuous drain current. This component offers a low drain-source on-resistance of 230mΩ at a nominal gate-source voltage of 760mV. Designed for small signal applications, it includes ESD protection and operates within a temperature range of -55°C to 150°C. The device is housed in an SC-75 (SOT-416) 3-lead package, supplied on a 3000-piece tape and reel.
Onsemi NTA4153NT1G technical specifications.
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