Single N-Channel MOSFET featuring 20V drain-source breakdown voltage and 915mA continuous drain current. This component offers a low drain-source on-resistance of 230mΩ at a nominal gate-source voltage of 760mV. Designed for small signal applications, it includes ESD protection and operates within a temperature range of -55°C to 150°C. The device is housed in an SC-75 (SOT-416) 3-lead package, supplied on a 3000-piece tape and reel.
PackageSC
Current Rating915mA
PolarityN-CHANNEL
Power300mW
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Technical Specifications
Onsemi NTA4153NT1G technical specifications.
General
Package/Case
SC
Continuous Drain Current (ID)
915mA
Current Rating
915mA
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
500mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
127mR
Element Configuration
Single
Fall Time
4.4ns
Gate to Source Voltage (Vgs)
6V
Height
0.8mm
Input Capacitance
110pF
Lead Free
Lead Free
Length
0.064inch
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
300mW
Nominal Vgs
760mV
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Polarization
N
Power Dissipation
300mW
Radiation Hardening
No
Rds On Max
230mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Threshold Voltage
760mV
Turn-Off Delay Time
25ns
Turn-On Delay Time
3.7ns
DC Rated Voltage
20V
Width
1.6mm
Compliance
RoHS
Compliant
Datasheet
Onsemi NTA4153NT1G Datasheet
Download the complete datasheet for Onsemi NTA4153NT1G to view detailed technical specifications.
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