The NTB52N10T4 is an N-channel MOSFET with a continuous drain current of 52A and a drain to source breakdown voltage of 100V. It has a drain to source resistance of 30mR and a gate to source voltage of 20V. The device is packaged in a D2PAK-3 case and has a maximum operating temperature of 150°C and a minimum operating temperature of -55°C.
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Onsemi NTB52N10T4 technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 52A |
| Current Rating | 52A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 30mR |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 20V |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 178W |
| RoHS Compliant | No |
| Turn-Off Delay Time | 74ns |
| DC Rated Voltage | 100V |
| RoHS | Not Compliant |
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