Single N-Channel Power MOSFET featuring 40V drain-source breakdown voltage and 116A continuous drain current. Offers a low 5.8mΩ Rds On resistance. Packaged in a D2PAK with 800 units per 800-REEL tape and reel. Operates from -55°C to 175°C with a maximum power dissipation of 150W. Includes fast switching characteristics with a 42ns fall time.
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Onsemi NTB5405NT4G technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 116A |
| Drain to Source Breakdown Voltage | 40V |
| Drain to Source Resistance | 5.8mR |
| Drain to Source Voltage (Vdss) | 40V |
| Element Configuration | Single |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 4nF |
| Lead Free | Lead Free |
| Length | 10.29mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Radiation Hardening | No |
| Rds On Max | 5.8mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 32ns |
| Turn-On Delay Time | 8.5ns |
| Width | 9.65mm |
| RoHS | Compliant |
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