The NTB5411NT4G is an N-channel MOSFET with a breakdown voltage of 60V and a continuous drain current of 80A. It features a drain to source resistance of 8.4 ohms and a gate to source voltage of 20V. The device is packaged in a D2PAK case and is suitable for surface mount applications. The operating temperature range is -55°C to 175°C, and the device is compliant with lead-free and RoHS regulations.
Onsemi NTB5411NT4G technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 80A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 8.4R |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 113ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 166W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 166W |
| Rds On Max | 10mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 116ns |
| RoHS | Compliant |
No datasheet is available for this part.
