Single P-Channel Power MOSFET featuring a -60V drain-source breakdown voltage and 18.5A continuous drain current. This component offers a low drain-to-source resistance of 120mΩ (max) at a 10V gate-source voltage. Designed for high-power applications, it boasts a maximum power dissipation of 88W and operates across a wide temperature range of -55°C to 175°C. The MOSFET is housed in a D2PAK package, facilitating efficient thermal management.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NTB5605PT4G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NTB5605PT4G technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 18.5A |
| Current Rating | -18.5A |
| Drain to Source Breakdown Voltage | -60V |
| Drain to Source Resistance | 120mR |
| Drain to Source Voltage (Vdss) | 60V |
| Element Configuration | Single |
| Fall Time | 75ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 4.83mm |
| Input Capacitance | 1.19nF |
| Lead Free | Lead Free |
| Length | 10.29mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 88W |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 88W |
| Radiation Hardening | No |
| Rds On Max | 140mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Threshold Voltage | -1.5V |
| Turn-Off Delay Time | 29ns |
| Turn-On Delay Time | 12.5ns |
| DC Rated Voltage | -60V |
| Width | 9.65mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTB5605PT4G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
