N-Channel Power MOSFET, D2PAK package, featuring 30V drain-source breakdown voltage and 75A continuous drain current. Offers low 8mΩ drain-source on-resistance and 125W maximum power dissipation. Designed for logic-level gate drive with a 20V maximum gate-to-source voltage. Includes fast switching characteristics with turn-on delay of 16ns and fall time of 105ns. Surface mountable and RoHS compliant, operating from -55°C to 150°C.
PackageD2PAK
Current Rating75A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi NTB75N03L09G technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 105ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 5.635nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 125W |
| Mount | Surface Mount |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 8mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 65ns |
| Turn-On Delay Time | 16ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTB75N03L09G Datasheet
Download the complete datasheet for Onsemi NTB75N03L09G to view detailed technical specifications.
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