
N-channel Power MOSFET featuring 60V drain-to-source breakdown voltage and 75A continuous drain current. Surface-mount D2PAK package offers low 9.5mΩ drain-to-source resistance. Operates from -55°C to 175°C with a maximum power dissipation of 214W. Includes 100ns fall time and 90ns turn-off delay time.
Onsemi NTB75N06G technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 9.5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.51nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Surface Mount |
| Nominal Vgs | 2.8V |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 214W |
| Rds On Max | 9.5mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 90ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTB75N06G to view detailed technical specifications.
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