The NTB75N06T4G is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 214W and a drain to source breakdown voltage of 60V. The device is RoHS compliant and features a drain to source resistance of 9.5mR. It is packaged in a D2PAK-3 package and is suitable for high-power applications.
Onsemi NTB75N06T4G technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 75A |
| Current Rating | 75A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 9.5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 4.51nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 214W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 214W |
| Rds On Max | 9.5mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 90ns |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTB75N06T4G to view detailed technical specifications.
No datasheet is available for this part.