Single N-Channel Power MOSFET featuring a 24V drain-source breakdown voltage and a continuous drain current of 110A. This surface mount component offers a low drain-source on-resistance of 4.1mΩ, with a maximum power dissipation of 2.88W. The DPAK package houses a single element with a gate-to-source voltage rating of 20V and operates within a temperature range of -55°C to 175°C. It is RoHS compliant and supplied on tape and reel.
PackageDPAK
Current Rating110A
PolarityN-CHANNEL
Power2.88W
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Technical Specifications
Onsemi NTD110N02RT4G technical specifications.
General
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 110A |
| Current Rating | 110A |
| Drain to Source Breakdown Voltage | 24V |
| Drain to Source Resistance | 4.1mR |
| Drain to Source Voltage (Vdss) | 24V |
| Drain-source On Resistance-Max | 4.1MR |
| Element Configuration | Single |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 3.44nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.5W |
| Nominal Vgs | 1.5V |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.88W |
| Radiation Hardening | No |
| Rds On Max | 4.6mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 27ns |
| Turn-On Delay Time | 11ns |
| DC Rated Voltage | 24V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi NTD110N02RT4G Datasheet
Download the complete datasheet for Onsemi NTD110N02RT4G to view detailed technical specifications.
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