The NTD20N06-1G is a 20A N-Channel MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It features a drain to source breakdown voltage of 60V and a maximum power dissipation of 60W. The device is packaged in a lead-free TO-251-3 package and is RoHS compliant. The NTD20N06-1G is suitable for high-current applications requiring a low on-resistance of 46mR.
Checking distributor stock and pricing after the page loads.
Sign in to ask questions about the Onsemi NTD20N06-1G datasheet using AI. Get instant answers about specifications, features, and technical details, ideal for finding information in larger documents.
Sign In to ChatWidest selection of semiconductors and electronic components in stock and ready to ship ™
Onsemi NTD20N06-1G technical specifications.
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 37.5mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 37.1ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.015nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 60W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 60W |
| Rds On Max | 46mR |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 27.1ns |
| DC Rated Voltage | 60V |
| RoHS | Compliant |
Download the complete datasheet for Onsemi NTD20N06-1G to view detailed technical specifications.
The embedded preview will load automatically when this section scrolls into view.
